2SC697

Material/Aufbau/Pol.: Silizium Planar NPN;
Form/Case/Outline: F-19 Anschlussfolge EBC;
Daten/electr.data: I F: 100 mA; U F: (5) V; U S: <0.8 V; Isp: <3 µA; ß (beta): 30-173*; Pd: 10 W; Imax(Ic): 3 A; Umax(Ucb): 100 V**; Umax(Uce): 60 V***; f g(FT): >35 MHz; tmax j: 175 °C; kompl.: 2SA547[A[Z]].
Varianten: 2SC697A = Umax(ucb): 130 V**, Umax(Ucb): 80 V***;
2SC697[A]Z = 38-115*, Isp: <0.1 µA;
2SC697[A]-A = 95-173*, 2SC697[A]-B = 57-115*, 2SC697[A]-D = 85-173*, 2SC697[A]-E = 57-115*, 2SC697[A]-F = 38-77*, 2SC697[A]-H = 57-115*, 2SC697[A]-I = 38-77*, 2SV697[A]-J = 30-50* (hfe-Gruppen);
Manufactured by Matsushita (J) -