Material/Aufbau: Silizium P-Kanal MOS-FET (L²-π-MOSV); Form/Case/Outline: 2-10S1B (~TO-262) | 2-10S2B (~TO-263) Anschlussfolge GDS; Daten/electr.data: I dss: 100 µA; V gss: +/- 20 V; I gss: <10 µA; V gs(th): -0.8 ... -2.0 V; Pd: 100 W; Id: 20 A; V dss: -60 V; Rds(on): 0.033 Ω; t r: 25 ns; tmax j: 150 °C; Leistungstreiber -
