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3DG30E

Information - Help 
ID = 47949
       
Country:
People's Republic of China
Brand: Common type China (PRC) tube/semicond.
Tube type:  Transistor   RF/IF-Stage 
Identical to 3DG30E

Base Wires
Description Material/Aufbau/Pol.: Silizium Planar NPN;
Form/Case: TO-72 Anschlussfolge EBCs (auch in TO-92 CBE ?);
Daten/electr.data: I F: __ mA; U F: __ V; Isp: __ µA; ß (beta): __; N: __ mW; Imax(Ic): 20 mA; Umax(Uce): 15 V (?); f g(FT): 1 GHz (?); tmax j: __ °C;
(no more data available yet) - 
Dimensions (WHD)
incl. pins / tip
6 x 6 x 6 mm / 0.24 x 0.24 x 0.24 inch
Weight 1 g / 0.04 oz
Information source - - -   
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to72_ebcs_139.gif 3DG30E: TVT 73
Günther Stabe † 19.8.20

 

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