Material/Aufbau/Pol.: Silizium diff. NPN Darlington; Form/Case/Outline: SOT-9, 4 Pins; Daten/electr.data: I F: 0.5 A; U S: <1.8 V; Isp: <0.5 mA; ß (beta): >2000; N: 35 W; Imax(Ic): 8 A; Umax(Uce): 60 V; f g(FT): 1 MHz; tmax j: 200 °C. -