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FDB33N25

Information - Help 
ID = 64943
       
Country:
United States of America (USA)
Brand: Fairchild Semiconductor Inc., South Portland/Maine
Tube type:  Transistor   Power-supply 
Identical to FDB33N25

Base Wires
Description

Material/Aufbau/Pol.: N-Kanal Power D-MOSFET, Enhancement Mode;
Form/Case/Outline: D²PAK (FDB33N25TM) Anschlussfolge GDS;
Daten/electr.data: N: 235 W; Id max: 33 A; Vdss: 250 V; Vgs: +/- 30 V; Rds(on): 0.094 Ω; tmax j: 150 °C.
High-voltage High-speed switching applications;
-

 
Dimensions (WHD)
incl. pins / tip
11 x 11 x 5 mm / 0.43 x 0.43 x 0.20 inch
Weight 1 g / 0.04 oz
Information source - - Manufacturers Literature   

fdb33n25_umgeb1.png
FDB33N25: Fairchild
Günther Stabe † 19.8.20

d2pak_gds~~1.png FDB33N25: Fairchild
Günther Stabe † 19.8.20

fdb33n25_innen.png
FDB33N25: Fairchild
Günther Stabe † 19.8.20

Collection of

 
fdb33.jpg

 

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