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GT25Q101

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ID = 51539
       
Country:
Japan
Brand: Toshiba Corporation; Tokyo
Tube type:  Transistor   Universal 
Identical to GT25Q101
Similar Tubes
Different maximum ratings:
  GT25J101

Base Wires
Description

Insulated Gate Bipolar Transistor Silicon N-Channel IGBT intended as high power switch or motor control.
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Text in other languages (may differ)
Dimensions (WHD)
incl. pins / tip
20 x 26 x 5 mm / 0.79 x 1.02 x 0.20 inch
Weight 3 g / 0.11 oz
Information source - - Manufacturers Literature   

gt25q101_s.png GT25Q101
Günther Stabe † 19.8.20

gt25q101_daten1.png
GT25Q101: Toshiba
Günther Stabe † 19.8.20

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gt25q101001.jpg

 

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