Aufbau/Content: IC (17 Trans., 17 Widerst., 5 Dioden); Form/Case: DIP-12-F [K174YH7]; Type: AF Power Amplifier 4.5 W @ 4 Ω (15 V); Data: Umax (Vcc): <15 V; Iccq: __ mA; Io: __ A; Pd: __ mW; Rin: 50 kΩ; Tj: -40 ... +150 °C; Ähnlich/similar: TBA810S -