| Beschreibung |
Material/Aufbau/Pol.: Silizium BJT PNP;
Form/Case: ~ TO-18 / ~ TO-52 (flach), später TO-92;
Daten/electr.data: I F: 30 mA; U F: 1 V; Isp: 1 µA; ß (beta): >20*; N: 200 mW; Imax(Ic): 150 mA; Umax(Uce): -20...-60 V**; f g(FT): <1 MHz; tmax j: 150 °C.
Varianten: kt208a = >20*, -20 V**, kt208b = >40*, -20 V**, kt208d = >40*, -30 V**, kt208e = >80*, -30 V**, kt208g = >20*, -30 V**, kt208i = >40*, -45 V**, kt208j = 20-60*, -45 V**, kt208k = >80*, -45 V**, kt208l = >20*, -60 V**, kt208m = >40*, -60 V**, kt208s = >20*, -45 V**, kt208v = >80*, -20 V**.
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