Antique radios, Old Time Radios
LND150N3
Country:
United States of America (USA)
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Identical to |
LND150N3
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Base |
Wires
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Description |
Silicon N-channel junction FET (DMOS), enhancement mode, intended as high-voltage low power switch. -
Text in other
languages (may
differ)
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Dimensions (WHD) incl. pins / tip |
5 x 5 x 4 mm / 0.20 x 0.20 x 0.16 inch |
Weight |
1 g / 0.04 oz |
Information source |
- - Manufacturers Literature Supertex Inc.
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LND150N3: TVT 1969 Verlag Nolde Dachau
Günther Stabe † 19.8.20
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