Antique radios, Old Time Radios
MTP4N80E
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Country:
United States of America (USA)
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| Identical to |
MTP4N80E
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| Base |
Wires
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| Description |
Material/Aufbau/Pol.: Silizium N-Kanal Power FET Enhancement Mode TMOS;
Form/Case: ~ TO-220;
Daten/electr.data: VDSS: 800 V; ID: 4 A; PD: 125 W; RDS(on): 3.0 Ω; TJ max: +150 °C.
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Dimensions (WHD)
incl. pins / tip |
10 x 15 x 5 mm / 0.39 x 0.59 x 0.20 inch |
| Weight |
2 g / 0.07 oz |
| Information source |
- - Manufacturers Literature
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MTP4N80E: Datasheet
Egon Strampe
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Collection of
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