Aufbau/Content: IC (1 Si-NPN-Trans., 1 GaAs LED); Form/Case/Outline: DIP-6; Type/Application: Phototransistor Optocoupler; Daten/electr.data: V F: 1.25 V; I F: <60 mA; I r: 10 µA; Pd: 100 mW; Umax(Uce): 70 V; high current Transfer Ratio: 40...320 %*; Vce sat: <0.4 V; Varianten: SFH600-0 = 40-80 %*, SFH600-1 = 63-125 %*, SFH600-2 = 100-200 %*, SFH600-3 = 160-320 %*; -
