Aufbau/Content: IC (1 Trans., 1 Diode GaAs); Form/Case: DIP-4; Type: Optocoupler, Infrared; Data: Vceo max: 90 V, Ic max: 50 mA, Ptot: 150 mW, t amb: -40...+100 °C. Variants: SFH609-1 = 40-80%, SFH609-2 = 63-125%, SFH609-3 = 100-200% (high current transfer ratios) -