Antique radios, Old Time Radios
SSS3N80
Country:
South Korea
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Identical to |
SSS3N80
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Base |
Wires
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Description |
Material/Aufbau/Pol.: N-Channel Power MOSFET;
Form/Case: TO-220F Anschlussfolge/Pins GDS;
Daten/electr.data: Vgs: +/- 30 V; Igss: <100 nA; Idss: <250 µA; Rds(on): < 5 Ohm; N: __ W; Id/Ias: 1.8 A; Vdss: 800 V*; t op: -55...+150 °C.
Variante: SSS3N70 = 700 V* - manufactured by Samsung Electronics (ROK) -
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Dimensions (WHD) incl. pins / tip |
10 x 15 x 4 mm / 0.39 x 0.59 x 0.16 inch |
Weight |
2 g / 0.07 oz |
Information source |
- - -
- - Manufacturers Literature Samsung
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- - -
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SSS3N80: Samsung
Günther Stabe † 19.8.20
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Collection of
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