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STP53N06

Information - Help 
ID = 79844
       
Country:
France
Brand: Thomson (marque), Thomson-Houston (CFTH); Paris
Tube type:  Transistor   Power/Output 
Identical to STP53N06

Base Wires
Description

Material/Aufbau/Pol.: Silizium N-Kanal Power MOS-FET, Anreicherungstyp / Enhancement mode;
Form/Case/Outline: TO-220 Anschlussfolge GDS;
Daten/electr.data: Vgss: __ V; Vgs: +/- 20 V; Idss: __ µA; Igss: __ nA; Vsd: __ V; Pd: 150 W; Idr: 53 A; Vdss: 60 V; Rds(on): <0.025 Ω; tmax j: 175 °C.
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Dimensions (WHD)
incl. pins / tip
10 x 15 x 4 mm / 0.39 x 0.59 x 0.16 inch
Weight 2 g / 0.07 oz
Information source - - Manufacturers Literature   ST (SGS-Thomson) Microelectronics

to220_ttt_44~~3.gif STP53N06: TTT Steidle 1981
Günther Stabe † 19.8.20

stp53n06.png
STP53N06: Power Mos Devices S.1113
Egon Strampe

 

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