Material/Aufbau/Pol.: LED GaAs + NPN Photo Transistor; Form/Case/Outline: Two Mounting flags; Transmissive Optical Sensor without Aperture (Gabellichtschranke); Daten/electr.data: Vr max: 6 V; V f: 1.25 V; I r: __ µA; If max: 60 mA; Pd max: 100 mW; Ic max: 100 mA; Umax(Uce): 70 V; 950 nm; t op: -55...+85 °C. Variante: TCST1000 = no mounting flags -
