Antique radios, Old Time Radios
TIL108
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Country:
United States of America (USA)
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| Identical to |
TIL108
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| Base |
Wires
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| Was used by |
Industrial |
| Description |
Aufbau/internal: Silizium Phototransistor + Infrarot-GaAS-Diode;
Form/Case: 2 x TO-5 an der Oberseite gekoppelt, 4 Pins;
Type: NPN-Output dc-Input Optocoupler;
Daten/electr.data: V(BR)CEO Breakdown Voltage: 35 V; P(D) Max.Power Dissipation: 150 mW; V(CE)sat Max.: 0.3 V; I(F) Max.Forward Current: 50 mA; V(F) Max.Forward Voltage: 1.5 V; CTR Min.Current Trans.Ratio: 10 %; t(resp) Max.Response Time: 5.0 µs; Viso Max.Isolation Voltage: 1.0 kV;
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Dimensions (WHD)
incl. pins / tip |
9 x 14 x mm / 0.35 x 0.55 x inch |
| Weight |
1 g / 0.04 oz |
| Information source |
- - Manufacturers Literature
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TIL108: Manufacturers Literature
Pentti Lamminen
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