Material/Aufbau/Pol.: Dual Forward Conducting P-Gate Thyristors (2 Trans., 2 Thyrist., 2 Dioden); Form/Case/Outline: SOP-8 (TISP61089[A]); Daten/electr.data: Vdrm: -100 V*; Itsm: 0.93 ... 11 A (900...0.1 s); Igsm: 40 A; V f: <3 V; Ih: >-150 mA; Igt: <5 mA; Vgt: <2.5 V; t op: -40...+85 °C. Variante: TISP61089A (-120 V*); Programmable Overvoltage Protector; Manufactured by Bourns (GB) -
